增特科技代理日本Mitsubishi/三菱MOS FET型晶体管RD07MVS1B-T112

增特科技代理日本mitsubishi/三菱mos fet型晶体管rd07mvs1-t112、rd07mvs1b-t112

封装：qfn

Zui少包装：2000pcs/reel

库存数量：20k(深圳、大批量订货8-10周)

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产品说明
rd07mvs1b是mosfet型晶体管专为vhf / uhfrf功率设计放大器的应用。
rd07mvs1b改善排水比激增
rd07mvs1通过优化mosfet结构。

产品特点
高功率增益：
噘嘴>7w，gp>10分贝
@vdd =7.2v，f =520mhz的
高效率：60％（典型值）。（175mhz时）
高效率：55％（典型值）。（520mhz的）

产品应用
对于高功率的放大器中的输出级
vhf /uhf频带移动无线电装置。
rohs柔性
rd07mvs1b-101，t112是符合rohs标准的产品。
符合rohs标准的指示后，由该地段标志字母“g”。
该产品包括铅高温融化的焊料。但是，它也适用于符合路线的下面的例外。1.lead高熔融焊锡（ietin无铅焊料合金中含有较多的85％及铅。）

全新原装供应：

三菱（mitsubishi）--hf/vhf/uhf/900mhz(分立mosfet)

rd100hhf1、rd70huf2、rd70hvf1、rd70hhf1、rd60huf1、rd45hmf1、d35huf2、rd30huf1、rd30hvf1、rd20hmf1、rd16hhf1、rd15hvf1、rd12mvp1、rd12mvs1、rd09mup2、rd07mvs1b、rd07mvs1、rd07mvs2、rd07mus2b、rd06hvf1、rd06hhf1、rd05mmp1、rd04hms2、rd02mus1、rd02mus1b、rd02mus2、rd01mus1、rd02mus2b、rd01mus2、rd00hhs1、rd00hvs1等rd系列；

三菱（mitsubishi）高输出功率si mosfet模块：

ra60h4452m1、ra60h4047m1、ra60h3847m1、ra60h1317m1a、ra60h1317m、ra55h4452m、ra55h4047m、ra55h3847m、ra55h3340m、ra45h8994m1、ra45h7687m1、ra45h4452m、ra45h4047m、ra45h4045mr、ra35h1516m、ra33h1516m1、ra30h4552m1、ra30h4452m、ra30h4047m1、ra30h4047m、ra30h3340m、ra30h2127m、ra30h1721m、ra30h1317m1、ra30h1317m、ra30h0608m、ra20h8994m、ra20h8087m、ra18h1213g、ra13h8891ma、ra13h8891mb、ra13h4452m、ra13h4047m、ra13h3340m、ra13h1317m、ra08h1317m、ra08n1317m、ra07n4452m、ra07n4047m、ra07n3340m、 ra07m4452msa、ra07m4452m、ra07m4047msa、ra07m4047m、ra07m3843m、ra07m3340m、ra07m2127m、ra07m1317msa、ra07m1317m、ra07m0608m、ra07h4452m、ra07h4047m、ra07h3340m、ra07h0608m、ra06h8285m、ra05h9595m、ra05h8693m、ra03m9595m、ra03m8894m、ra03m8087m、ra03m4547md、ra03m4043md、ra03m3540md、ra02m8087md、ra01l9595m、ra01l8693ma等ra系列

本产品的类型是射频IC，品牌是Mitsubishi/三菱，型号是RD07MVS1B-T112，封装是SLP，批号是1432+